Technische Details IRF6218STRLPBF Infineon Technologies
Description: MOSFET P-CH 150V 27A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V.
Weitere Produktangebote IRF6218STRLPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| IRF6218STRLPBF | International Rectifier/Infineon |
 P-канальний ПТ, Udss, В = 150, Id = 27 А, Ptot, Вт = 250, Тип монт. = smd, Ciss, пФ @ Uds, В = 2210 @ 25, Qg, нКл = 110 @ 10 В, Rds = 150 мОм @ 16 A, 10 В, Tексп, °C = -55...+175, Ugs(th) = 5 В @ 250 мкА,... Транзистори Корпус: TO-220-AB Од. вим: штAnzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IRF6218STRLPBF | Infineon Technologies |
Description: MOSFET P-CH 150V 27A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IRF6218STRLPBF | Infineon Technologies |
MOSFET MOSFT PCh -150V -27A 150mOhm 21nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF6218STRLPBF |
|
Hersteller: International Rectifier/Infineon
P-канальний ПТ, Udss, В = 150, Id = 27 А, Ptot, Вт = 250, Тип монт. = smd, Ciss, пФ @ Uds, В = 2210 @ 25, Qg, нКл = 110 @ 10 В, Rds = 150 мОм @ 16 A, 10 В, Tексп, °C = -55...+175, Ugs(th) = 5 В @ 250 мкА,... Транзистори Корпус: TO-220-AB Од. вим: шт
Anzahl je Verpackung: 800 Stücke
P-канальний ПТ, Udss, В = 150, Id = 27 А, Ptot, Вт = 250, Тип монт. = smd, Ciss, пФ @ Uds, В = 2210 @ 25, Qg, нКл = 110 @ 10 В, Rds = 150 мОм @ 16 A, 10 В, Tексп, °C = -55...+175, Ugs(th) = 5 В @ 250 мкА,... Транзистори Корпус: TO-220-AB Од. вим: шт
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF6218STRLPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 27A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Description: MOSFET P-CH 150V 27A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF6218STRLPBF |
|
Hersteller: Infineon Technologies
MOSFET MOSFT PCh -150V -27A 150mOhm 21nC
MOSFET MOSFT PCh -150V -27A 150mOhm 21nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH