auf Bestellung 622 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.09 EUR |
| 10+ | 1.46 EUR |
| 100+ | 1.24 EUR |
| 500+ | 1.13 EUR |
| 1000+ | 1.12 EUR |
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Technische Details IRF624PBF Vishay Semiconductors
Description: MOSFET N-CH 250V 4.4A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.6A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V.
Weitere Produktangebote IRF624PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IRF624PBF | Hersteller : Vishay |
 Trans MOSFET N-CH 250V 4.4A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IRF624PBF | Hersteller : Vishay |
Trans MOSFET N-CH 250V 4.4A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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| IRF624PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.4A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 14A On-state resistance: 1.1Ω Gate charge: 14nC Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRF624PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 250V 4.4A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.6A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IRF624PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 4.4A; Idm: 14A; 50W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.4A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 14A On-state resistance: 1.1Ω Gate charge: 14nC Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |