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IRF634STRL IOR


sihf634s.pdf
Hersteller: IOR
1998
auf Bestellung 800 Stücke:

Lieferzeit 21-28 Tag (e)
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Technische Details IRF634STRL IOR

Description: MOSFET N-CH 250V 8.1A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: D²PAK (TO-263), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 74W (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).

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IRF634STRL IRF634STRL Vishay Siliconix sihf634s.pdf Description: MOSFET N-CH 250V 8.1A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF634STRL sihf634s.pdf
IRF634STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 8.1A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH