IRF640SPBF VISHAY
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 130W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 130W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1050 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
49+ | 1.49 EUR |
53+ | 1.36 EUR |
71+ | 1.02 EUR |
74+ | 0.97 EUR |
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Technische Details IRF640SPBF VISHAY
Description: MOSFET N-CH 200V 18A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V, Power Dissipation (Max): 3.1W (Ta), 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote IRF640SPBF nach Preis ab 0.97 EUR bis 5.1 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF640SPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 130W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 1050 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640SPBF | Hersteller : Vishay | Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK |
auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640SPBF | Hersteller : Vishay | Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK |
auf Bestellung 162 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640SPBF | Hersteller : Vishay | Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK |
auf Bestellung 162 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640SPBF | Hersteller : Vishay | Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK |
auf Bestellung 64 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640SPBF | Hersteller : Vishay | Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK |
auf Bestellung 64 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640SPBF | Hersteller : Vishay Semiconductors | MOSFET N-Chan 200V 18 Amp |
auf Bestellung 4999 Stücke: Lieferzeit 14-28 Tag (e) |
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IRF640SPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 18A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 3.1W (Ta), 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 277 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF640SPBF | Hersteller : VISHAY |
Description: VISHAY - IRF640SPBF - N CHANNEL MOSFET, 200V, 18A, D2-PAK tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 0 rohsCompliant: Y-EX Dauer-Drainstrom Id: 0 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - Unlimited usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 0 euEccn: NLR Verlustleistung: 0 Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 0 Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: N Channel Rds(on)-Prüfspannung: 0 Betriebstemperatur, max.: 0 Drain-Source-Durchgangswiderstand: 0 directShipCharge: 25 SVHC: Lead |
auf Bestellung 151 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640SPBF Produktcode: 175573 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IRF640SPBF | Hersteller : Vishay | Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |