IRF6602
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Lieferzeit 21-28 Tag (e)
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Technische Details IRF6602
Description: MOSFET N-CH 20V 11A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DIRECTFET™ MQ, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 2.3W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MQ, Packaging: Tape & Reel (TR).
Weitere Produktangebote IRF6602
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRF6602 | Infineon Technologies |
Description: MOSFET N-CH 20V 11A DIRECTFET Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DIRECTFET™ MQ Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 2.3W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MQ Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF6602 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 11A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MQ
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MQ
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 11A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MQ
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MQ
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH