Technische Details IRF6603 IOR
Description: MOSFET N-CH 30V 27A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +20V, -12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: DIRECTFET™ MT, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.6W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 92A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MT, Packaging: Tape & Reel (TR).
Weitere Produktangebote IRF6603
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRF6603 | International Rectifier |
 MFET N-CH 30V 28A DirectFETtm (new!!! ключ для ноутбуков) Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IRF6603 | Infineon Technologies |
Description: MOSFET N-CH 30V 27A DIRECTFET Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: DIRECTFET™ MT Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.6W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 92A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MT Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRF6603 |
|
Hersteller: International Rectifier
MFET N-CH 30V 28A DirectFETtm (new!!! ключ для ноутбуков) Транзистори
MFET N-CH 30V 28A DirectFETtm (new!!! ключ для ноутбуков) Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF6603 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 27A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ MT
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MT
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 27A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ MT
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
Im Einkaufswagen
Stück im Wert von UAH