Produkte > IRF > IRF6622TRPBF

IRF6622TRPBF


IRF6622(TR)PbF.pdf
Hersteller:

auf Bestellung 695 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IRF6622TRPBF

Description: MOSFET N-CH 25V 15A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 13 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: DIRECTFET™ SQ, Vgs(th) (Max) @ Id: 2.35V @ 25µA, Power Dissipation (Max): 2.2W (Ta), 34W (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 59A (Tc), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric SQ, Packaging: Tape & Reel (TR), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).

Weitere Produktangebote IRF6622TRPBF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IRF6622TRPBF IRF6622TRPBF Infineon Technologies IRF6622(TR)PbF.pdf Description: MOSFET N-CH 25V 15A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ SQ
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.2W (Ta), 34W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 59A (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SQ
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6622TRPBF IRF6622(TR)PbF.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 15A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ SQ
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.2W (Ta), 34W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 59A (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SQ
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH