auf Bestellung 4375 Stücke:
Lieferzeit 318-322 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.89 EUR |
| 10+ | 3.52 EUR |
| 100+ | 2.83 EUR |
| 500+ | 2.32 EUR |
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Technische Details IRF6636TRPBF Infineon / IR
Description: MOSFET N-CH 20V 18A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric ST, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V, Power Dissipation (Max): 2.2W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2.45V @ 250µA, Supplier Device Package: DIRECTFET™ ST, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 10 V.
Weitere Produktangebote IRF6636TRPBF
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Verfügbarkeit |
Preis |
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IRF6636TRPBF | Hersteller : Infineon Technologies |
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| IRF6636TRPBF | Hersteller : INFINEON TECHNOLOGIES |
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IRF6636TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 20V 18A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric ST Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.45V @ 250µA Supplier Device Package: DIRECTFET™ ST Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 10 V |
Produkt ist nicht verfügbar |