IRF6721STR1PBF International Rectifier
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF6721STR1PBF International Rectifier
Description: MOSFET N-CH 30V 14A DIRECTFET, Rds On (Max) @ Id, Vgs: 7.3mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric SQ, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: DIRECTFET™ SQ, Vgs(th) (Max) @ Id: 2.4V @ 25µA, Power Dissipation (Max): 2.2W (Ta), 42W (Tc).
Weitere Produktangebote IRF6721STR1PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
IRF6721STR1PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 14A DIRECTFETRds On (Max) @ Id, Vgs: 7.3mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric SQ Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: DIRECTFET™ SQ Vgs(th) (Max) @ Id: 2.4V @ 25µA Power Dissipation (Max): 2.2W (Ta), 42W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IRF6721STR1PBF | Infineon / IR |
MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF6721STR1PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A DIRECTFET
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SQ
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ SQ
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Description: MOSFET N-CH 30V 14A DIRECTFET
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SQ
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ SQ
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF6721STR1PBF |
![]() |
Hersteller: Infineon / IR
MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ
MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



