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IRF6725MTRPBF Infineon


IRF6725M(TR)PBF.pdf IRSDS10741-1.pdf?t.download=true&u=5oefqw Hersteller: Infineon

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Technische Details IRF6725MTRPBF Infineon

Description: MOSFET N-CH 30V 28A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V, Power Dissipation (Max): 2.8W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 100µA, Supplier Device Package: DIRECTFET™ MX, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V.

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IRF6725MTRPBF
Produktcode: 124996
IRF6725M(TR)PBF.pdf IRSDS10741-1.pdf?t.download=true&u=5oefqw Transistoren > MOSFET N-CH
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IRF6725MTRPBF IRF6725MTRPBF Hersteller : Infineon Technologies irf6725mpbf.pdf Trans MOSFET N-CH Si 30V 28A 7-Pin Direct-FET MX T/R
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IRF6725MTRPBF IRF6725MTRPBF Hersteller : Infineon Technologies IRF6725M(TR)PBF.pdf Description: MOSFET N-CH 30V 28A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Produkt ist nicht verfügbar
IRF6725MTRPBF Hersteller : International Rectifier IRSDS10741-1.pdf?t.download=true&u=5oefqw Description: DIRECTFET POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Produkt ist nicht verfügbar
IRF6725MTRPBF IRF6725MTRPBF Hersteller : Infineon / IR Infineon_IRF6725M_DataSheet_v01_01_EN-1732561.pdf MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
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