IRF6795MTR1PBF Infineon Technologies
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details IRF6795MTR1PBF Infineon Technologies
Description: MOSFET N-CH 25V 32A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 160A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 32A, 10V, Power Dissipation (Max): 2.8W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 100µA, Supplier Device Package: DIRECTFET™ MX, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4280 pF @ 13 V.
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auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF6795MTR1PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 25V 32A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 160A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 32A, 10V Power Dissipation (Max): 2.8W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: DIRECTFET™ MX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4280 pF @ 13 V |
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