IRF7101PBF
Produktcode: 30739
Hersteller: IRUds,V: 20 V
Idd,A: 3,5 A
Rds(on), Ohm: 0,10 Ohm
Ciss, pF/Qg, nC: 320/15
Bem.: Два транзистори в одному корпусі
JHGF: SMD
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Technische Details IRF7101PBF IR
- MOSFET, DUAL, NN, LOGIC, SO-8
- Transistor Type:MOSFET
- Max Voltage Vds:20V
- On State Resistance:0.1ohm
- Power Dissipation:2W
- Transistor Case Style:SOIC
- No. of Pins:8
- Case Style:SOIC
- Cont Current Id:3.5A
- Current Temperature:25`C
- External Depth:5.2mm
- External Length / Height:1.75mm
- External Width:4.05mm
- Full Power Rating Temperature:25`C
- Max Junction Temperature Tj:150`C
- Max Voltage Vgs th:3V
- Min Junction Temperature, Tj:-55`C
- Min Voltage Vgs th:1V
- No. of Transistors:2
- Power Dissipation Pd:2W
- Pulse Current Idm:14A
- Row Pitch:6.3mm
- SMD Marking:F7101
- Termination Type:SMD
- Transistor Polarity:Dual N
- Typ Voltage Vds:20V
- Typ Voltage Vgs th:3V
- Voltage Vds:20V
- Voltage Vgs Rds on Measurement:10V
Weitere Produktangebote IRF7101PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IRF7101PBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 20V 3.5A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
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IRF7101PBF | Hersteller : Infineon Technologies |
MOSFET 20V DUAL N-CH HEXFET 100mOhms 10nC |
Produkt ist nicht verfügbar |