IRF720
Produktcode: 3059
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Lieblingsprodukt
Hersteller: IR
Gehäuse: TO-220AB
Drain-Source-Spannung Uds, V: 400 V
Drain-Strom Idd, A: 3,2 A
Durchlasswiderstand Rds(on), Ohm: 1,8 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 410/20
Montage: THT
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Technische Details IRF720 IR
- MOSFET, N TO-220
- Transistor Type:MOSFET
- Transistor Polarity:N
- Cont Current Id:3A
- On State Resistance:1.8ohm
- Case Style:TO-220AB
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Lead Spacing:2.54mm
- Max Voltage Vds:400V
- No. of Pins:3
- No. of Transistors:1
- Pin Configuration:a
- Pin Format:1 g
- 2 d/tab
- 3 s
- Power Dissipation:40W
- Power Dissipation Pd:40W
- Pulse Current Idm:12A
- Transistor Case Style:TO-220AB
Weitere Produktangebote IRF720 nach Preis ab 0.48 EUR bis 1.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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IRF720 | onsemi |
Description: MOSFET N-CH 400V 3.3A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V |
auf Bestellung 12045 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF720 | Siliconix |
N-MOSFET 3A 400V 50W 1.8? IRF720 IRF720 TIRF720Anzahl je Verpackung: 10 Stücke |
auf Bestellung 170 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF720 | Siliconix |
N-MOSFET 3A 400V 50W 1.8? IRF720 IRF720 TIRF720Anzahl je Verpackung: 10 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF720 | ON Semiconductor |
Trans MOSFET N-CH Si 400V 3.3A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 12045 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF720 |
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Hersteller: onsemi
Description: MOSFET N-CH 400V 3.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Description: MOSFET N-CH 400V 3.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
auf Bestellung 12045 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 790+ | 0.69 EUR |
| IRF720 |
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auf Bestellung 170 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 1.46 EUR |
| IRF720 |
![]() |
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 1.46 EUR |
| IRF720 |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 400V 3.3A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH Si 400V 3.3A 3-Pin(3+Tab) TO-220AB
auf Bestellung 12045 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1190+ | 0.55 EUR |
| 10000+ | 0.48 EUR |



