
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 2.96 EUR |
10+ | 2.15 EUR |
25+ | 1.8 EUR |
100+ | 1.63 EUR |
500+ | 1.53 EUR |
1000+ | 1.34 EUR |
2000+ | 1.29 EUR |
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Technische Details IRF720SPBF Vishay Semiconductors
Description: MOSFET N-CH 400V 3.3A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V, Power Dissipation (Max): 3.1W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V.
Weitere Produktangebote IRF720SPBF nach Preis ab 1.7 EUR bis 3.04 EUR
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IRF720SPBF | Hersteller : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V |
auf Bestellung 410 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF720SPBF |
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auf Bestellung 59800 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF720SPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRF720SPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRF720SPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRF720SPBF | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.1A Pulsed drain current: 13A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: SMD Kind of channel: enhancement Gate charge: 20nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRF720SPBF | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 2.1A; Idm: 13A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.1A Pulsed drain current: 13A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: SMD Kind of channel: enhancement Gate charge: 20nC Kind of package: tube |
Produkt ist nicht verfügbar |