IRF720SPBF Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 400V 3.3A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
auf Bestellung 488 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.85 EUR |
| 50+ | 2.29 EUR |
| 100+ | 1.88 EUR |
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Technische Details IRF720SPBF Vishay Siliconix
Description: MOSFET N-CH 400V 3.3A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V, Power Dissipation (Max): 3.1W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V.
Weitere Produktangebote IRF720SPBF nach Preis ab 1.88 EUR bis 3.77 EUR
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IRF720SPBF | Hersteller : Vishay Semiconductors |
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IRF720SPBF | Hersteller : Vishay |
Trans MOSFET N-CH 400V 3.3A 3-Pin(2+Tab) D2PAK |
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IRF720SPBF | Hersteller : Vishay |
Trans MOSFET N-CH 400V 3.3A 3-Pin(2+Tab) D2PAK |
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IRF720SPBF | Hersteller : Vishay |
Trans MOSFET N-CH 400V 3.3A 3-Pin(2+Tab) D2PAK |
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| IRF720SPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.3A; Idm: 13A; 50W Kind of package: reel; tape Drain-source voltage: 400V Drain current: 3.3A On-state resistance: 1.8Ω Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 13A Mounting: SMD Case: D2PAK; TO263 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IRF720SPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.3A; Idm: 13A; 50W Kind of package: reel; tape Drain-source voltage: 400V Drain current: 3.3A On-state resistance: 1.8Ω Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 13A Mounting: SMD Case: D2PAK; TO263 |
Produkt ist nicht verfügbar |