IRF7210PBF

IRF7210PBF Infineon Technologies


irf7210pbf.pdf Hersteller: Infineon Technologies
Trans MOSFET P-CH Si 12V 16A 8-Pin SOIC
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Technische Details IRF7210PBF Infineon Technologies

Description: MOSFET P-CH 12V 16A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 600mV @ 500µA (Min), Supplier Device Package: 8-SO, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 17179 pF @ 10 V.

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IRF7210PBF IRF7210PBF Hersteller : Infineon Technologies IRF7210PbF.pdf Description: MOSFET P-CH 12V 16A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 500µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 17179 pF @ 10 V
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IRF7210PBF IRF7210PBF Hersteller : Infineon / IR irf7210pbf-1169283.pdf MOSFET 20V DUAL N-CH HEXFET 7mOhms 212nC
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