Technische Details IRF7303QTRPBF IRF
Description: MOSFET 2N-CH 30V 4.9A 8-SOIC, Packaging: Cut Tape (CT), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.9A, Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V, Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.
Weitere Produktangebote IRF7303QTRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| IRF7303QTRPBF | Hersteller : IOR |
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auf Bestellung 32500 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7303QTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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IRF7303QTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 30V 4.9A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |