Technische Details IRF7304TR IOR
Description: MOSFET 2P-CH 20V 4.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.3A, Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V, Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 700mV @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote IRF7304TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IRF7304TR | UMW |
 SO-8 Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IRF7304TR | Infineon Technologies |
Description: MOSFET 2P-CH 20V 4.3A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRF7304TR |
|
Hersteller: UMW
SO-8 Транзистори
SO-8 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7304TR |
|
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 4.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET 2P-CH 20V 4.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH