Technische Details IRF7313QTRPBF IOR
Description: MOSFET 2N-CH 30V 6.5A 8SO, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 6.5A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Cut Tape (CT).
Weitere Produktangebote IRF7313QTRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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|---|---|---|---|---|---|
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IRF7313QTRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 6.5A 8SOPart Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Current - Continuous Drain (Id) @ 25°C: 6.5A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF7313QTRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 6.5A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 6.5A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


