Technische Details IRF7325TRPBF IOR
Description: MOSFET 2P-CH 12V 7.8A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 7.8A, Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V, Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote IRF7325TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| IRF7325TRPBF | Hersteller : IR |
 SOP8 0450+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7325TRPBF | Hersteller : IR |
SOP8 0831+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7325TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET P-CH Si 12V 7.8A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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IRF7325TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2P-CH 12V 7.8A 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.8A Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |
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IRF7325TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2P-CH 12V 7.8A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.8A Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |