IRF7329PBF Infineon Technologies
auf Bestellung 228 Stücke:
Lieferzeit 14-28 Tag (e)
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Technische Details IRF7329PBF Infineon Technologies
Description: MOSFET 2P-CH 12V 9.2A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 9.2A, Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V, Rds On (Max) @ Id, Vgs: 17mOhm @ 9.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote IRF7329PBF
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| IRF7329PBF |
auf Bestellung 9080 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7329PBF Produktcode: 58448 |
 Transistoren > Transistoren P-Kanal-Feld |
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IRF7329PBF | Hersteller : Infineon Technologies |
Description: MOSFET 2P-CH 12V 9.2A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.2A Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 9.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |