IRF7329TR International Rectifier
Hersteller: International Rectifier
2xP-MOSFET HEXFET 9.2A 12V 2W 0.17? IRF7329 TIRF7329
Anzahl je Verpackung: 10 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.48 EUR |
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Technische Details IRF7329TR International Rectifier
Description: MOSFET 2P-CH 12V 9.2A 8SO, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 900mV @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V, Rds On (Max) @ Id, Vgs: 17mOhm @ 9.2A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 9.2A, Drain to Source Voltage (Vdss): 12V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote IRF7329TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IRF7329TR | Infineon Technologies |
Description: MOSFET 2P-CH 12V 9.2A 8SO Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 900mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V Rds On (Max) @ Id, Vgs: 17mOhm @ 9.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V Current - Continuous Drain (Id) @ 25°C: 9.2A Drain to Source Voltage (Vdss): 12V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRF7329TR |
|
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 12V 9.2A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Drain to Source Voltage (Vdss): 12V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 12V 9.2A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Drain to Source Voltage (Vdss): 12V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH