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IRF7331TRPBF

Hersteller: IR
Транз. Пол. ММ 2N-HEXFET SO8 Udss=20V; Id=7A; Pdmax=2W; Rds=0,030 Ohm

auf Bestellung 3600 Stücke:

Lieferzeit 14-21 Tag (e)

Anzahl	Preis
1+	2.36 EUR
10+	2.09 EUR
100+	1.90 EUR

Im Einkaufswagen Stück im Wert von UAH

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Technische Details IRF7331TRPBF IR

Description: MOSFET 2N-CH 20V 7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 7A, Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V, Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-SO.

Weitere Produktangebote IRF7331TRPBF

Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis
IRF7331TRPBF	Hersteller : Infineon Technologies	Description: MOSFET 2N-CH 20V 7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SO	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
IRF7331TRPBF	Hersteller : Infineon Technologies	Description: MOSFET 2N-CH 20V 7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SO	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
IRF7331TRPBF	Hersteller : Infineon Technologies	MOSFETs MOSFT DUAL NCh 20V 7.0A	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH