IRF7342D2PBF

Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 3.4A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V

Hersteller: International Rectifier
MOSFET P-Channe/-55V/3,4A/0,105 Ohm/SO-8 Транзистори

Hersteller: Infineon Technologies
MOSFET MOSFT PCh w/Schttky -3.4A 105mOhm 26nC

Hersteller: INFINEON
Description: INFINEON - IRF7342D2PBF - Dual-MOSFET, p-Kanal, 55 V, 3.4 A, 0.105 ohm, SOIC, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 55
Dauer-Drainstrom Id: 3.4
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 2
Bauform - Transistor: SOIC
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: p-Kanal
Betriebswiderstand, Rds(on): 0.105
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 1
SVHC: No SVHC (27-Jun-2018)