Technische Details IRF7343QTRPBF IOR
Description: MOSFET N/P-CH 55V 8-SOIC, Packaging: Cut Tape (CT), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A, Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V, Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.
Weitere Produktangebote IRF7343QTRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| IRF7343QTRPBF | Hersteller : IOR |
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auf Bestellung 32500 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7343QTRPBF | Hersteller : IRF |
09+ |
auf Bestellung 12043 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7343QTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N/P-CH Si 55V 4.7A/3.4A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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IRF7343QTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N/P-CH 55V 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |