Technische Details IRF7350TRPBF IR
Description: MOSFET N/P-CH 100V 2.1A/1.5A 8SO, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A, Drain to Source Voltage (Vdss): 100V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote IRF7350TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| IRF7350TRPBF | International Rectifier |
 (HEXFET,DUAL,N+P-CH,LL,2W,100V,2A,SO-8) Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IRF7350TRPBF | Infineon Technologies |
Description: MOSFET N/P-CH 100V 2.1A/1.5A 8SO Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A Drain to Source Voltage (Vdss): 100V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IRF7350TRPBF | Infineon / IR |
MOSFET MOSFT DUAL N/PCh 100V 2.1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF7350TRPBF |
|
Hersteller: International Rectifier
(HEXFET,DUAL,N+P-CH,LL,2W,100V,2A,SO-8) Транзистори
(HEXFET,DUAL,N+P-CH,LL,2W,100V,2A,SO-8) Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7350TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 100V 2.1A/1.5A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 100V 2.1A/1.5A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7350TRPBF |
|
Hersteller: Infineon / IR
MOSFET MOSFT DUAL N/PCh 100V 2.1A
MOSFET MOSFT DUAL N/PCh 100V 2.1A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH