Technische Details IRF7379TRPBF Infineon / IR
Description: MOSFET N/P-CH 30V 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A, Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V, Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.
Weitere Produktangebote IRF7379TRPBF
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IRF7379TRPBF | Hersteller : INFINEON TECHNOLOGIES |
 Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8 Mounting: SMD Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Drain-source voltage: 30/-30V Drain current: 5.8/-4.3A On-state resistance: 45/90mΩ Type of transistor: N/P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel Anzahl je Verpackung: 4000 Stücke |
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IRF7379TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N/P-CH Si 30V 5.8A/4.3A 8-Pin SOIC T/R |
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IRF7379TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N/P-CH 30V 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |
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IRF7379TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N/P-CH 30V 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |
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IRF7379TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8 Mounting: SMD Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Drain-source voltage: 30/-30V Drain current: 5.8/-4.3A On-state resistance: 45/90mΩ Type of transistor: N/P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel |
Produkt ist nicht verfügbar |