IRF7403TRPBF Infineon Technologies
auf Bestellung 2457 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.97 EUR |
| 10+ | 1.45 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.76 EUR |
| 2000+ | 0.70 EUR |
| 4000+ | 0.69 EUR |
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Technische Details IRF7403TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 8.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.
Weitere Produktangebote IRF7403TRPBF nach Preis ab 0.69 EUR bis 2.48 EUR
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IRF7403TRPBF | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 30V 8.5A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 2710 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7403TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R |
auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7403TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R |
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IRF7403TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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IRF7403TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.5A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhancement Technology: HEXFET® Kind of package: reel Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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IRF7403TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 8.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF7403TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.5A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhancement Technology: HEXFET® Kind of package: reel |
Produkt ist nicht verfügbar |