IRF7403TRPBF Infineon Technologies
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 160+ | 0.98 EUR |
| 255+ | 0.59 EUR |
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Technische Details IRF7403TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 8.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.
Weitere Produktangebote IRF7403TRPBF nach Preis ab 0.48 EUR bis 2.57 EUR
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IRF7403TRPBF | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 30V 8.5A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7403TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R |
auf Bestellung 720 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7403TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R |
auf Bestellung 3790 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7403TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R |
auf Bestellung 3790 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7403TRPBF | Hersteller : Infineon Technologies |
MOSFET MOSFT 30V 8.5A 22mOhm 38nC |
auf Bestellung 3276 Stücke: Lieferzeit 14-28 Tag (e) |
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IRF7403TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 8.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
auf Bestellung 8064 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7403TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R |
auf Bestellung 720 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7403TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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IRF7403TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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IRF7403TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.5A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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IRF7403TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.5A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |