Technische Details IRF740AS IR
Description: MOSFET N-CH 400V 10A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V, Power Dissipation (Max): 3.1W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V.
Weitere Produktangebote IRF740AS nach Preis ab 1.34 EUR bis 1.34 EUR
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IRF740AS Produktcode: 22643
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Lieblingsprodukt
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Hersteller : IR |
 Transistoren > MOSFET N-CHGehäuse: D2Pak Uds,V: 400 Idd,A: 10 Rds(on), Ohm: 0.55 Ciss, pF/Qg, nC: 1030/36 JHGF: SMD |
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IRF740AS | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 400V 10A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF740AS | Hersteller : Vishay / Siliconix |
MOSFETs RECOMMENDED ALT IRF740ASPBF |
Produkt ist nicht verfügbar |