IRF7413Z PBF
Produktcode: 25377
Hersteller: IRGehäuse: SO-8
Uds,V: 30
Idd,A: 13
Rds(on), Ohm: 01.11.2000
Ciss, pF/Qg, nC: 650/22
JHGF: SMD
Produkt ist nicht verfügbar
| Anzahl | Preis |
|---|---|
| 1+ | 0.57 EUR |
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Technische Details IRF7413Z PBF IR
- MOSFET, N, LOGIC, SO-8
- Transistor Type:MOSFET
- Max Voltage Vds:30V
- On State Resistance:0.01ohm
- Power Dissipation:2.5W
- Transistor Case Style:SOIC
- No. of Pins:8
- Case Style:SOIC
- Cont Current Id:13A
- Current Temperature:25`C
- External Depth:5.2mm
- External Length / Height:1.75mm
- External Width:4.05mm
- Full Power Rating Temperature:25`C
- No. of Transistors:1
- Power Dissipation Pd:2.5W
- Pulse Current Idm:100A
- Row Pitch:6.3mm
- SMD Marking:IRF7413ZPBF
- Termination Type:SMD
- Transistor Polarity:N
- Typ Voltage Vds:30V
- Typ Voltage Vgs th:1.8V
- Voltage Vgs Rds on Measurement:10V
Weitere Produktangebote IRF7413Z PBF
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IRF7413ZPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 13A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.25V @ 25µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V |
Produkt ist nicht verfügbar |
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IRF7413ZPBF | Hersteller : Infineon Technologies |
MOSFET 30V 1 N-CH HEXFET 10mOhms 9.5nC |
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