Technische Details IRF7413Z IR
Description: MOSFET N-CH 30V 13A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.25V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete.
Weitere Produktangebote IRF7413Z
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRF7413Z | Infineon Technologies |
 Description: MOSFET N-CH 30V 13A 8SOInput Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.25V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 95 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRF7413Z |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Description: MOSFET N-CH 30V 13A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Produkt ist nicht verfügbar
Mindestbestellmenge: 95 Stücke
Im Einkaufswagen
Stück im Wert von UAH