IRF7413ZTR Infineon

Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SOIC-8
Drain-Source-Spannung Uds, V: 30 В
Drain-Strom Idd, A: 10 A
Durchlasswiderstand Rds(on), Ohm: 10 мОм
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1210/9,5
Bemerkung: -
Montage: SMD

Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V

Hersteller: Infineon / IR
MOSFET