IRF7413ZTRPBF Infineon Technologies
| Anzahl | Preis |
|---|---|
| 155+ | 0.94 EUR |
| 209+ | 0.69 EUR |
| 283+ | 0.5 EUR |
| 500+ | 0.38 EUR |
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Technische Details IRF7413ZTRPBF Infineon Technologies
Description: MOSFET N-CH 30V 13A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.25V @ 25µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote IRF7413ZTRPBF nach Preis ab 0.36 EUR bis 1.27 EUR
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IRF7413ZTRPBF | INFINEON TECHNOLOGIES |
  Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 2.5W Gate-source voltage: ±20V Technology: HEXFET® |
auf Bestellung 126 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7413ZTRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 13A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.25V @ 25µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 902 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7413ZTRPBF | Infineon Technologies |
MOSFETs MOSFT 30V 13A 10mOhm 9.5nC |
auf Bestellung 13653 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF7413ZTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Gate-source voltage: ±20V
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Gate-source voltage: ±20V
Technology: HEXFET®
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 67+ | 1.07 EUR |
| 119+ | 0.6 EUR |
| 126+ | 0.57 EUR |
| IRF7413ZTRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 13A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 902 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.13 EUR |
| 22+ | 0.81 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.42 EUR |
| IRF7413ZTRPBF |
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Hersteller: Infineon Technologies
MOSFETs MOSFT 30V 13A 10mOhm 9.5nC
MOSFETs MOSFT 30V 13A 10mOhm 9.5nC
auf Bestellung 13653 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.27 EUR |
| 10+ | 0.9 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.4 EUR |
| 2500+ | 0.36 EUR |