IRF7433PBF
Produktcode: 172872
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Lieblingsprodukt
Hersteller: IR
Gehäuse: SO-8
Drain-Source-Spannung Uds, V: 12 В
Drain-Strom Id, A: 8,9 А
Durchlasswiderstand Rds(on), Ohm: 24 мОм
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1877/20
Anmerkung: Ultraniedriger Durchlasswiderstand
Montage: SMD
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Technische Details IRF7433PBF IR
- MOSFET, P, SO-8
- Transistor Polarity:P
- Max Current Id:-8.9A
- Max Voltage Vds:12V
- On State Resistance:0.024ohm
- Rds Measurement Voltage:-4.5V
- Max Voltage Vgs:-8V
- Power Dissipation:2.5W
- Operating Temperature Range:-55`C to +150`C
- Transistor Case Style:SOIC
- No. of Pins:8
- SVHC:No SVHC
- Case Style:SOIC
- Cont Current Id:8.7A
- Current Temperature:25`C
- External Depth:5.2mm
- External Length / Height:1.75mm
- External Width:4.05mm
- Full Power Rating Temperature:25`C
- Power Dissipation Pd:2.5W
- Pulse Current Idm:36A
- SMD Marking:F7433
- Termination Type:SMD
- Transistor Type:MOSFET
- Typ Voltage Vds:-12V
- Typ Voltage Vgs th:-0.9V
- Voltage Vgs Rds on Measurement:-4.5V
Weitere Produktangebote IRF7433PBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IRF7433PBF | International Rectifier |
 Транзистори |
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Im Einkaufswagen Stück im Wert von UAH | |
 |
IRF7433PBF | Infineon Technologies |
Description: MOSFET P-CH 12V 8.9A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 8.7A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1877 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IRF7433PBF | Infineon Technologies |
MOSFET 1 P-CH -12V HEXFET 24mOhms 20nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF7433PBF |
|
Hersteller: International Rectifier
Транзистори
Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7433PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 12V 8.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1877 pF @ 10 V
Description: MOSFET P-CH 12V 8.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8.7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1877 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7433PBF |
|
Hersteller: Infineon Technologies
MOSFET 1 P-CH -12V HEXFET 24mOhms 20nC
MOSFET 1 P-CH -12V HEXFET 24mOhms 20nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH