Technische Details IRF7452QTRPBF IOR
Description: MOSFET N-CH 100V 4.5A 8-SOIC, Packaging: Cut Tape (CT), Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 5.5V @ 250µA, Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width).
Weitere Produktangebote IRF7452QTRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
IRF7452QTRPBF | Infineon Technologies |
 Description: MOSFET N-CH 100V 4.5A 8-SOICPackaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 5.5V @ 250µA Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IRF7452QTRPBF | Infineon / IR |
MOSFET AUTO HEXFET SO-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF7452QTRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 4.5A 8-SOIC
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description: MOSFET N-CH 100V 4.5A 8-SOIC
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7452QTRPBF |
|
Hersteller: Infineon / IR
MOSFET AUTO HEXFET SO-8
MOSFET AUTO HEXFET SO-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH