IRF7483MTRPBF International Rectifier
Hersteller: International Rectifier
Description: MOSFET N-CH 40V 135A DIRECTFET
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MF
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DirectFET™ Isometric MF
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Technische Details IRF7483MTRPBF International Rectifier
Description: IRF7483 - 12V-300V N-CHANNEL POW, Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: DirectFET™ Isometric MF, Vgs(th) (Max) @ Id: 3.9V @ 100µA, Power Dissipation (Max): 74W (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V, Current - Continuous Drain (Id) @ 25°C: 135A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MF, Packaging: Bulk.
Weitere Produktangebote IRF7483MTRPBF nach Preis ab 2.64 EUR bis 5.09 EUR
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IRF7483MTRPBF | Infineon Technologies |
Description: IRF7483 - 12V-300V N-CHANNEL POW Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: DirectFET™ Isometric MF Vgs(th) (Max) @ Id: 3.9V @ 100µA Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V Current - Continuous Drain (Id) @ 25°C: 135A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MF Packaging: Bulk |
auf Bestellung 3799 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7483MTRPBF | Infineon / IR |
MOSFET 40V Single N-Channel HEXFET Power MOSFET |
auf Bestellung 712 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF7483MTRPBF |
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Hersteller: Infineon Technologies
Description: IRF7483 - 12V-300V N-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DirectFET™ Isometric MF
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MF
Packaging: Bulk
Description: IRF7483 - 12V-300V N-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DirectFET™ Isometric MF
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MF
Packaging: Bulk
auf Bestellung 3799 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 205+ | 2.64 EUR |
| IRF7483MTRPBF |
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Hersteller: Infineon / IR
MOSFET 40V Single N-Channel HEXFET Power MOSFET
MOSFET 40V Single N-Channel HEXFET Power MOSFET
auf Bestellung 712 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.09 EUR |
| 10+ | 4.61 EUR |
| 100+ | 3.71 EUR |
| 500+ | 3.03 EUR |