IRF7483MTRPBF Infineon Technologies
Hersteller: Infineon TechnologiesIRF7483MTRPBF Infineon Technologies AG Transistors MOSFETs N-CH Si 40V 135A 8-Pin Direct-FET MF T/R Si - Arrow.com
auf Bestellung 3799 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 334+ | 1.62 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.36 EUR |
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Technische Details IRF7483MTRPBF Infineon Technologies
Description: MOSFET N-CH 40V 135A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MF, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 135A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 100µA, Supplier Device Package: DirectFET™ Isometric MF, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V.
Weitere Produktangebote IRF7483MTRPBF nach Preis ab 2.2 EUR bis 4.28 EUR
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IRF7483MTRPBF | Hersteller : International Rectifier |
Description: MOSFET N-CH 40V 135A DIRECTFET Packaging: Bulk Package / Case: DirectFET™ Isometric MF Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: DirectFET™ Isometric MF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V |
auf Bestellung 12946 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7483MTRPBF | Hersteller : Infineon Technologies |
Description: IRF7483 - 12V-300V N-CHANNEL POW Packaging: Bulk Package / Case: DirectFET™ Isometric MF Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: DirectFET™ Isometric MF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V |
auf Bestellung 3799 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7483MTRPBF | Hersteller : Infineon / IR |
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auf Bestellung 712 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7483MTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 135A 8-Pin Direct-FET MF T/R |
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IRF7483MTRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 135A 8-Pin Direct-FET MF T/R |
Produkt ist nicht verfügbar |
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IRF7483MTRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 135A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MF Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: DirectFET™ Isometric MF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V |
Produkt ist nicht verfügbar |