IRF7493PBF

Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 9.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube

Hersteller: International Rectifier
MOSFET N-CH 80V 9.3A SOIC-8 Транзистори

Hersteller: International Rectifier/Infineon
N-канальний ПТ, Udss, В = 80, Id = 9,3 А, Ptot, Вт = 2,5, Тип монт. = smd, Ciss, пФ @ Uds, В = 1510 @ 25, Qg, нКл = 53 @ 10 В, Rds = 15 мОм @ 5,6 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 4 В @ 250 мкА,... Транзистори Корпус: SOICN-8 Од. вим: шт
Anzahl je Verpackung: 95 Stücke

Hersteller: Infineon Technologies
MOSFET 80V 1 N-CH HEXFET 15mOhms 31nC

Hersteller: INFINEON
Description: INFINEON - IRF7493PBF - Leistungs-MOSFET, n-Kanal, 80 V, 9.3 A, 0.015 ohm, SOIC, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80
Dauer-Drainstrom Id: 9.3
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 2.5
Gate-Source-Schwellenspannung, max.: 4
Verlustleistung: 2.5
Bauform - Transistor: SOIC
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.015
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.015
SVHC: No SVHC (27-Jun-2018)