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Technische Details IRF7494TR INTERNATIONAL RECTIFIER
Description: MOSFET N-CH 150V 5.2A 8-SOIC, Packaging: Cut Tape (CT), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 25 V.
Weitere Produktangebote IRF7494TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IRF7494TR | Infineon Technologies |
 Description: MOSFET N-CH 150V 5.2A 8-SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF7494TR |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 5.2A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 25 V
Description: MOSFET N-CH 150V 5.2A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH