Technische Details IRF7494TRPBF IRF
Description: MOSFET N-CH 150V 5.1A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote IRF7494TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IRF7494TRPBF | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 150V 5.1A 8SOInput Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |