Technische Details IRF7506TR IR
Description: MOSFET 2P-CH 30V 1.7A MICRO8, Packaging: Cut Tape (CT), Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 1.7A, Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V, Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: Micro8™, Part Status: Obsolete.
Weitere Produktangebote IRF7506TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IRF7506TR | Hersteller : IR |
 04+ SOP8 |
auf Bestellung 6700 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7506TR | Hersteller : Infineon Technologies |
Description: MOSFET 2P-CH 30V 1.7A MICRO8 Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.7A Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: Micro8™ Part Status: Obsolete |
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