Technische Details IRF7555TR IR
Description: MOSFET 2P-CH 20V 4.3A MICRO8, Packaging: Cut Tape (CT), Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.3A, Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V, Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: Micro8™, Part Status: Obsolete.
Weitere Produktangebote IRF7555TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| IRF7555TR | International Rectifier |
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IRF7555TR | Infineon Technologies |
Description: MOSFET 2P-CH 20V 4.3A MICRO8 Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: Micro8™ Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF7555TR |
|
Hersteller: International Rectifier
Транзистори
Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7555TR |
|
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 4.3A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro8™
Part Status: Obsolete
Description: MOSFET 2P-CH 20V 4.3A MICRO8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro8™
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH