IRF7601TR International Rectifier
Hersteller: International Rectifier
Trans MOSFET N-CH Si 20V 5.7A IRF7601 IRF7601TR IRF7601 TIRF7601
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 0.64 EUR |
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Technische Details IRF7601TR International Rectifier
Description: MOSFET N-CH 20V 5.7A MICRO8, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Part Status: Obsolete, Supplier Device Package: Micro8™, Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Packaging: Cut Tape (CT).
Weitere Produktangebote IRF7601TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
|---|---|---|---|---|---|
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IRF7601TR | Infineon Technologies |
Description: MOSFET N-CH 20V 5.7A MICRO8 Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Part Status: Obsolete Supplier Device Package: Micro8™ Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF7601TR |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 5.7A MICRO8
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 5.7A MICRO8
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH