Technische Details IRF7663 IR
Description: MOSFET P-CH 20V 8.2A MICRO8, Packaging: Tube, Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: Micro8™, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V.
Weitere Produktangebote IRF7663
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IRF7663 | Hersteller : IR |
 SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
||
| IRF7663 | Hersteller : IR |
SOP-8 |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
||
 |
IRF7663 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 20V 8.2A MICRO8 Packaging: Tube Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: Micro8™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 10 V |
Produkt ist nicht verfügbar |
|
 |
IRF7663 | Hersteller : Infineon / IR |
MOSFET |
Produkt ist nicht verfügbar |