Produkte > INTERNATIONAL RECTIFIER > IRF7805TRPBF
IRF7805TRPBF

IRF7805TRPBF International Rectifier

IRSDS10170-1.pdf?t.download=true&u=5oefqw Hersteller: International Rectifier
Description: PFET, 30V, 0.011OHM, 1OXIDE SEMI
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
498+0.93 EUR
Mindestbestellmenge: 498
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IRF7805TRPBF International Rectifier

Description: MOSFET N-CH 30V 13A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V.

Weitere Produktangebote IRF7805TRPBF nach Preis ab 0.60 EUR bis 0.98 EUR

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IRF7805TRPBF IRF7805TRPBF Hersteller : Infineon Technologies 165562011591726irf7805pbf.pdffileid5546d462533600a401535607ccc41cc0.pdffileid554.pdf Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R
auf Bestellung 1887 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
575+0.98 EUR
1000+0.87 EUR
Mindestbestellmenge: 575
Im Einkaufswagen  Stück im Wert von  UAH
IRF7805TRPBF IRF7805TRPBF Hersteller : Infineon Technologies 165562011591726irf7805pbf.pdffileid5546d462533600a401535607ccc41cc0.pdffileid554.pdf Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R
auf Bestellung 127934 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
575+0.98 EUR
1000+0.87 EUR
10000+0.74 EUR
100000+0.60 EUR
Mindestbestellmenge: 575
Im Einkaufswagen  Stück im Wert von  UAH
IRF7805TRPBF IRF7805TRPBF Hersteller : ROCHESTER ELECTRONICS IRSDS10170-1.pdf?t.download=true&u=5oefqw Description: ROCHESTER ELECTRONICS - IRF7805TRPBF - IRF7805 12V-300V N-CHANNEL POWER MOSFET
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 133276 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRF7805TRPBF IRF7805TRPBF Hersteller : Infineon Technologies 165562011591726irf7805pbf.pdffileid5546d462533600a401535607ccc41cc0.pdffileid554.pdf Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
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IRF7805TRPBF IRF7805TRPBF Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AAB9AF9695F1A303005056AB0C4F&compId=irf7805pbf.pdf?ci_sign=443ae672556fdca4e15edb1e1122c36e4d066fc1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
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IRF7805TRPBF IRF7805TRPBF Hersteller : Infineon Technologies irf7805pbf.pdf?fileId=5546d462533600a401535607ccc41cc0 Description: MOSFET N-CH 30V 13A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7805TRPBF IRF7805TRPBF Hersteller : Infineon Technologies irf7805pbf.pdf?fileId=5546d462533600a401535607ccc41cc0 Description: MOSFET N-CH 30V 13A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7805TRPBF IRF7805TRPBF Hersteller : Infineon Technologies Infineon_IRF7805PBF_DS_v02_00_EN-1732114.pdf MOSFET MOSFT 30V 13A 11mOhm 22nC
Produkt ist nicht verfügbar
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IRF7805TRPBF IRF7805TRPBF Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AAB9AF9695F1A303005056AB0C4F&compId=irf7805pbf.pdf?ci_sign=443ae672556fdca4e15edb1e1122c36e4d066fc1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH