Technische Details IRF7807VD1 IR
Description: MOSFET N-CH 30V 8.3A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V.
Weitere Produktangebote IRF7807VD1 nach Preis ab 0.84 EUR bis 0.84 EUR
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IRF7807VD1 Produktcode: 24875
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IR |
 Transistoren > MOSFET N-CHGehäuse: SO-8 Uds,V: 30 Idd,A: 08.03.2015 Rds(on), Ohm: 0.017 Ciss, pF/Qg, nC: - /9.5 JHGF: SMD |
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IRF7807VD1 | Infineon Technologies |
Description: MOSFET N-CH 30V 8.3A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF7807VD1 Produktcode: 24875
zu Favoriten hinzufügen
Lieblingsprodukt
|
|
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 08.03.2015
Rds(on), Ohm: 0.017
Ciss, pF/Qg, nC: - /9.5
JHGF: SMD
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 08.03.2015
Rds(on), Ohm: 0.017
Ciss, pF/Qg, nC: - /9.5
JHGF: SMD
Produkt ist nicht verfügbar
| Anzahl | Preis |
|---|---|
| 1+ | 0.84 EUR |
| IRF7807VD1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 8.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Description: MOSFET N-CH 30V 8.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH