IRF7811AVPBF
Produktcode: 71910
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Lieblingsprodukt
Hersteller: IR
Gehäuse: SO-8
Uds,V: 30
Idd,A: 14
Rds(on), Ohm: 0.014
Bem.: Verschlusse, Qg: 17 nC
JHGF: SMD
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Technische Details IRF7811AVPBF IR
- MOSFET, N, LOGIC, SO-8
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:30V
- Cont Current Id:10.8A
- On State Resistance:0.011ohm
- Voltage Vgs Rds on Measurement:4.5V
- Typ Voltage Vgs th:3V
- Case Style:SOIC
- Termination Type:SMD
- Current Temperature:25`C
- External Depth:5.2mm
- External Length / Height:1.75mm
- External Width:4.05mm
- Full Power Rating Temperature:25`C
- Max Voltage Vds:30V
- No. of Transistors:1
- Pin Format:1 S
- 2 S
- 3 S
- 4 G
- 5 D
- 6 D
- 7 D
- 8 D
- Power Dissipation:2.5W
- Power Dissipation Pd:2.5W
- Pulse Current Idm:10.8A
- Row Pitch:6.3mm
- SMD Marking:IRF7811AVPBF
- Transistor Case Style:SOIC
Weitere Produktangebote IRF7811AVPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRF7811AVPBF | Hersteller : International Rectifier/Infineon |
P-канальний ПТ, Udss, В = 28, Id = 11 A, Ciss, пФ @ Uds, В = 1801 @ 10, Qg, нКл = 17, Rds = 11 мОм, Ugs(th) = 2 В, Р, Вт = 2,5 Вт, Тексп, °C = -55...+150, Тип монт. = smd,... Група товару: Транзистори Корпус: SOICN-8 Од. вим: шт Anzahl je Verpackung: 100 Stücke |
verfügbar 55 Stücke: |
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| IRF7811AVPBF | Hersteller : International Rectifier |
Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IRF7811AVPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 10.8A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V |
Produkt ist nicht verfügbar |
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IRF7811AVPBF | Hersteller : Infineon / IR |
MOSFET 30V 1 N-CH HEXFET 14mOhms 17nC |
Produkt ist nicht verfügbar |