IRF7811AVTR
Produktcode: 25341
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Lieblingsprodukt
Hersteller: IR
Gehäuse: SO-8
Uds,V: 28
Idd,A: 11.04.2015
Rds(on), Ohm: 01.12.2000
Ciss, pF/Qg, nC: 1800/23
JHGF: SMD
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Weitere Produktangebote IRF7811AVTR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
IRF7811AVTR | Infineon Technologies |
Description: MOSFET N-CH 30V 10.8A 8SOInput Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V Drive Voltage (Max Rds On, Min Rds On): 4.5V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRF7811AVTR |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 10.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Description: MOSFET N-CH 30V 10.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH


