IRF7821PBF International Rectifier


irf7821pbf.pdf?fileId=5546d462533600a401535608d7f31d06
Hersteller: International Rectifier
SO-8 Транзистори
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Technische Details IRF7821PBF International Rectifier

Description: MOSFET N-CH 30V 13.6A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA, Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 155°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube, Power Dissipation (Max): 2.5W (Ta).

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IRF7821PBF IRF7821PBF Infineon Technologies irf7821pbf.pdf?fileId=5546d462533600a401535608d7f31d06 Description: MOSFET N-CH 30V 13.6A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Power Dissipation (Max): 2.5W (Ta)
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IRF7821PBF IRF7821PBF Infineon Technologies Infineon_IRF7821_DataSheet_v01_01_EN-1228058.pdf MOSFET 30V N-CH HEXFET 9.1mOhms 9.3nC
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IRF7821PBF irf7821pbf.pdf?fileId=5546d462533600a401535608d7f31d06
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13.6A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Power Dissipation (Max): 2.5W (Ta)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF7821PBF Infineon_IRF7821_DataSheet_v01_01_EN-1228058.pdf
Hersteller: Infineon Technologies
MOSFET 30V N-CH HEXFET 9.1mOhms 9.3nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH