Produkte > IRF7902TRPBF
IRF7902TRPBF
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auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details IRF7902TRPBF
Description: MOSFET 2N-CH 30V 6.4A/9.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A, Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V, Rds On (Max) @ Id, Vgs: 22.6mOhm @ 6.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.25V @ 25µA, Supplier Device Package: 8-SO.
Weitere Produktangebote IRF7902TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IRF7902TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 6.4A/9.7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W, 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V Rds On (Max) @ Id, Vgs: 22.6mOhm @ 6.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.25V @ 25µA Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IRF7902TRPBF | Infineon / IR |
MOSFET MOSFT DUAL NCh 30V 9.7A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF7902TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 6.4A/9.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W, 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Description: MOSFET 2N-CH 30V 6.4A/9.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W, 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF7902TRPBF |
|
Hersteller: Infineon / IR
MOSFET MOSFT DUAL NCh 30V 9.7A
MOSFET MOSFT DUAL NCh 30V 9.7A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH