IRF7905PBF Infineon Technologies

Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SO, Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.25V @ 25µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V, Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V.