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Technische Details IRF7910PBF Infineon / IR
Description: MOSFET 2N-CH 12V 10A 8SO, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V, Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 10A, Drain to Source Voltage (Vdss): 12V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube.
Weitere Produktangebote IRF7910PBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| IRF7910PBF | International Rectifier |
 MOSFET 2N-CH 12V 10A 8SOIC Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IRF7910PBF | Infineon Technologies |
Description: MOSFET 2N-CH 12V 10A 8SO Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 6V Current - Continuous Drain (Id) @ 25°C: 10A Drain to Source Voltage (Vdss): 12V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF7910PBF |
|
Hersteller: International Rectifier
MOSFET 2N-CH 12V 10A 8SOIC Транзистори
MOSFET 2N-CH 12V 10A 8SOIC Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7910PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 12V 10A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 10A
Drain to Source Voltage (Vdss): 12V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: MOSFET 2N-CH 12V 10A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 10A
Drain to Source Voltage (Vdss): 12V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH